{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8536704","patent":{"patent_number":"US-8536704","title":"Semiconductor device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2011-10-12T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"An interlayer insulating film containing oxygen and carbon is formed on a semiconductor substrate. A groove is formed in the interlayer insulating film. An auxiliary film containing predetermined first and second metallic elements is formed on a bottom surface and a sidewall of the formed groove. Then, an interconnect body layer containing copper is formed to fill the groove. By performing a thermal treatment, a first barrier film containing a compound of the first metallic element and an oxygen element of the interlayer insulating film, and a second barrier film containing a compound of the second metallic element and carbon element of the interlayer insulating film are formed on the interlayer insulating film on the bottom surface and the sidewall of the groove."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for fabricating the same","description":"An interlayer insulating film containing oxygen and carbon is formed on a semiconductor substrate. A groove is formed in the interlayer insulating film. An auxiliary film containing predetermined firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8536704","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8536704","citation_suggestion":"Patentable. \"Semiconductor device and method for fabricating the same\" (US-8536704). https://patentable.app/patents/US-8536704","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8536704","json":"https://patentable.app/api/llm-context/US-8536704","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:42:41.835Z"}