{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537524","patent":{"patent_number":"US-8537524","title":"Capacitor structure in a semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-07-27T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"An on-chip capacitor includes a first layer first polarity conducting strip and a first layer second polarity conducting strip, wherein the first layer second polarity conducting strip is arranged adjacent to and spaced apart from the first layer first polarity conducting strip, a second layer first polarity conducting strip and a second layer second polarity conducting strip, wherein the second layer second polarity conducting strip is arranged adjacent to and spaced apart from the second layer first polarity conducting strip, wherein the second layer second polarity conducting strip is arranged overlying the first layer second polarity conducting strip, wherein the second layer first polarity conducting strip is arranged overlying the first layer first polarity conducting strip; wherein the first layer first-polarity conducting strip electrically couples with the second layer first polarity conducting strip; and wherein the first-layer second polarity conducting strip electrically couples with the second layer second-polarity conducting strip."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Capacitor structure in a semiconductor device","description":"An on-chip capacitor includes a first layer first polarity conducting strip and a first layer second polarity conducting strip, wherein the first layer second polarity conducting strip is arranged adj","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537524","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537524","citation_suggestion":"Patentable. \"Capacitor structure in a semiconductor device\" (US-8537524). https://patentable.app/patents/US-8537524","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537524","json":"https://patentable.app/api/llm-context/US-8537524","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:59:23.682Z"}