{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537590","patent":{"patent_number":"US-8537590","title":"Memory having tunnel barrier and method for writing and reading information to and from this memory","assignee":null,"inventors":[],"filing_date":"2009-04-17T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"A resistive memory comprises a tunnel barrier. The tunnel barrier is in contact with a memory material which has a memory property that can be changed by a write signal. Because of the exponential dependence of the tunnel resistance on the parameters of the tunnel barrier, a change in the memory property has a powerful effect on the tunnel resistance, whereby the information stored in the memory material can be read. A solid electrolyte (ion conductor), for example, is suitable as a memory layer, wherein the ions thereof can be moved relative to the interface with the tunnel barrier by the write signal. The memory layer, however, can also be, for example, a further tunnel barrier, the tunnel resistance of which can be changed by the write signal, for example by displacement of a metal layer present in this tunnel barrier. The invention further provides a method for storing and reading information to and from a memory."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory having tunnel barrier and method for writing and reading information to and from this memory","description":"A resistive memory comprises a tunnel barrier. The tunnel barrier is in contact with a memory material which has a memory property that can be changed by a write signal. Because of the exponential dep","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537590","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537590","citation_suggestion":"Patentable. \"Memory having tunnel barrier and method for writing and reading information to and from this memory\" (US-8537590). https://patentable.app/patents/US-8537590","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537590","json":"https://patentable.app/api/llm-context/US-8537590","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:45:31.331Z"}