{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537592","patent":{"patent_number":"US-8537592","title":"Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells","assignee":null,"inventors":[],"filing_date":"2011-04-15T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L","G11C","G11C"],"num_claims":22,"abstract":"An array of nonvolatile memory cells includes a plurality of vertically stacked tiers of nonvolatile memory cells. The tiers individually include a first plurality of horizontally oriented first electrode lines and a second plurality of horizontally oriented second electrode lines crossing relative to the first electrode lines. Individual of the memory cells include a crossing one of the first electrode lines and one of the second electrode lines and material there-between. Specifically, programmable material, a select device in series with the programmable material, and current conductive material in series between and with the programmable material and the select device are provided in series with such crossing ones of the first and second electrode lines. The material and devices may be oriented for predominant current flow in defined horizontal and vertical directions. Method and other implementations and aspects are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells","description":"An array of nonvolatile memory cells includes a plurality of vertically stacked tiers of nonvolatile memory cells. The tiers individually include a first plurality of horizontally oriented first elect","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537592","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537592","citation_suggestion":"Patentable. \"Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells\" (US-8537592). https://patentable.app/patents/US-8537592","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537592","json":"https://patentable.app/api/llm-context/US-8537592","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:36:00.305Z"}