{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537594","patent":{"patent_number":"US-8537594","title":"Resistance change element and resistance change memory","assignee":null,"inventors":[],"filing_date":"2011-07-05T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"According to one embodiment, a resistance change element includes a first film provided on a first electrode side, a second film provided on a second electrode side, a barrier film sandwiched between the first film and the second film, and metal impurities added in the first or second film, the metal impurities migrating between the first and second films bi-directionally according to a direction of a first electric field generated between the first and second electrodes. The resistance change element has a first resistance state when the metal impurities are present in the first film, and the resistance change element has a second resistance state different from the first resistance state when the metal impurities are present in the second film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistance change element and resistance change memory","description":"According to one embodiment, a resistance change element includes a first film provided on a first electrode side, a second film provided on a second electrode side, a barrier film sandwiched between ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537594","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537594","citation_suggestion":"Patentable. \"Resistance change element and resistance change memory\" (US-8537594). https://patentable.app/patents/US-8537594","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537594","json":"https://patentable.app/api/llm-context/US-8537594","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:20:09.659Z"}