{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537595","patent":{"patent_number":"US-8537595","title":"Resistance change memory device","assignee":null,"inventors":[],"filing_date":"2011-09-13T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A resistance change memory device includes: a cell array having multiple layers of mats laminated thereon, each of the mats having word lines and bit lines intersecting each other as well as resistance change type memory cells arranged at intersections thereof, each of the mats further having therein a reference cell and a reference bit line connected to the reference cell, the reference cell set to a state of a certain resistance value; a selection circuit configured to select a word line in each mat of the cell array, and select a bit line intersecting a selected word line and the reference bit line at the same time; and a sense amplifier configured to sense data by comparing respective cell currents of a selected memory cell on the selected bit line and the reference cell on the reference bit line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistance change memory device","description":"A resistance change memory device includes: a cell array having multiple layers of mats laminated thereon, each of the mats having word lines and bit lines intersecting each other as well as resistanc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537595","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537595","citation_suggestion":"Patentable. \"Resistance change memory device\" (US-8537595). https://patentable.app/patents/US-8537595","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537595","json":"https://patentable.app/api/llm-context/US-8537595","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:34:57.256Z"}