{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537604","patent":{"patent_number":"US-8537604","title":"Magnetoresistance element, MRAM, and initialization method for magnetoresistance element","assignee":null,"inventors":[],"filing_date":"2009-10-16T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistance element, MRAM, and initialization method for magnetoresistance element","description":"A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a revers","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537604","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537604","citation_suggestion":"Patentable. \"Magnetoresistance element, MRAM, and initialization method for magnetoresistance element\" (US-8537604). https://patentable.app/patents/US-8537604","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537604","json":"https://patentable.app/api/llm-context/US-8537604","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:55:59.429Z"}