{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8537617","patent":{"patent_number":"US-8537617","title":"Source side asymmetrical precharge programming scheme","assignee":null,"inventors":[],"filing_date":"2012-02-03T00:00:00.000Z","publication_date":"2013-09-17T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":9,"abstract":"A method for programming a NAND flash string. In the present method, wordlines are driven to a first pass voltage for coupling a string precharge voltage provided by a source line to the memory cells, where the string precharge voltage is greater than the first pass voltage. With the exception a first wordline corresponding to a first memory cell adjacent to a selected memory cell, all the other wordlines are driven to a second pass voltage greater than the first pass voltage. The first memory cell is positioned between the selected memory cell and a string select device. A second wordline corresponding to a second memory cell adjacent to the selected memory cell is driven to a first supply voltage for turning off the second memory cell. A third wordline corresponding to the selected memory cell is driven to a programming voltage greater than the second pass voltage. A bitline is then coupled to the selected memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Source side asymmetrical precharge programming scheme","description":"A method for programming a NAND flash string. In the present method, wordlines are driven to a first pass voltage for coupling a string precharge voltage provided by a source line to the memory cells,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8537617","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8537617","citation_suggestion":"Patentable. \"Source side asymmetrical precharge programming scheme\" (US-8537617). https://patentable.app/patents/US-8537617","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8537617","json":"https://patentable.app/api/llm-context/US-8537617","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:15:42.008Z"}