{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541053","patent":{"patent_number":"US-8541053","title":"Enhanced densification of silicon oxide layers","assignee":null,"inventors":[],"filing_date":"2011-07-07T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["B82Y","B82Y","H01L"],"num_claims":18,"abstract":"Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Enhanced densification of silicon oxide layers","description":"Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is int","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541053","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541053","citation_suggestion":"Patentable. \"Enhanced densification of silicon oxide layers\" (US-8541053). https://patentable.app/patents/US-8541053","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541053","json":"https://patentable.app/api/llm-context/US-8541053","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:24:26.804Z"}