{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541269","patent":{"patent_number":"US-8541269","title":"Native devices having improved device characteristics and methods for fabrication","assignee":null,"inventors":[],"filing_date":"2010-04-29T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A method for fabricating a native device is presented. The method includes forming a gate structure over a substrate starting at an outer edge of an inner marker region, where the gate structure extends in a longitudinal direction, and performing MDD implants, where each implant is performed using a different orientation with respect to the gate structure, performing pocket implants, where each implant is performed using a different orientation with respect to the gate structure, and concentrations of the pocket implants vary based upon the orientations. A transistor fabricated as a native device, is presented, which includes an inner marker region, an active outer region which surrounds the inner marker region, a gate structure coupled to the inner marker region, and first and second source/drain implants located within the active outer region and interposed between the first source/drain implant and the second source/drain implant."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Native devices having improved device characteristics and methods for fabrication","description":"A method for fabricating a native device is presented. The method includes forming a gate structure over a substrate starting at an outer edge of an inner marker region, where the gate structure exten","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541269","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541269","citation_suggestion":"Patentable. \"Native devices having improved device characteristics and methods for fabrication\" (US-8541269). https://patentable.app/patents/US-8541269","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541269","json":"https://patentable.app/api/llm-context/US-8541269","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:17:14.653Z"}