{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541275","patent":{"patent_number":"US-8541275","title":"Single metal gate CMOS integration by intermixing polarity specific capping layers","assignee":null,"inventors":[],"filing_date":"2009-11-12T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method for forming a complementary metal oxide semiconductor device includes forming a first capping layer on a dielectric layer, blocking portions in the capping layer in regions where the capping layer is to be preserved using a block mask. Exposed portions of the first capping layer are intermixed with the dielectric layer to form a first intermixed layer. The block mask is removed. The first capping layer and the first intermixed layer are etched such that the first capping layer is removed to re-expose the dielectric layer in regions without removing the first intermixed layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Single metal gate CMOS integration by intermixing polarity specific capping layers","description":"A method for forming a complementary metal oxide semiconductor device includes forming a first capping layer on a dielectric layer, blocking portions in the capping layer in regions where the capping ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541275","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541275","citation_suggestion":"Patentable. \"Single metal gate CMOS integration by intermixing polarity specific capping layers\" (US-8541275). https://patentable.app/patents/US-8541275","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541275","json":"https://patentable.app/api/llm-context/US-8541275","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:11:11.092Z"}