{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541277","patent":{"patent_number":"US-8541277","title":"Non-volatile memory device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2012-02-14T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":16,"abstract":"A method of fabricating a non-volatile memory device is provided. The method includes sequentially forming a tunnel insulation layer and a first polysilicon layer on a substrate, patterning the first polysilicon layer and the tunnel insulation layer, forming a dielectric layer to cover the patterned first polysilicon layer and the patterned tunnel insulation layer, forming a gate insulation layer on the substrate where the substrate is exposed, forming a second polysilicon layer to cover the dielectric layer, and forming a first floating gate and a second floating gate a fixed distance apart from each other, the forming of the first and second floating gates including etching middle portions of the second polysilicon layer, the dielectric layer, the patterned first polysilicon layer, and the patterned tunnel insulation layer, and separating the etched layers into two parts."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory device and method for fabricating the same","description":"A method of fabricating a non-volatile memory device is provided. The method includes sequentially forming a tunnel insulation layer and a first polysilicon layer on a substrate, patterning the first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541277","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541277","citation_suggestion":"Patentable. \"Non-volatile memory device and method for fabricating the same\" (US-8541277). https://patentable.app/patents/US-8541277","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541277","json":"https://patentable.app/api/llm-context/US-8541277","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:01.168Z"}