{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541284","patent":{"patent_number":"US-8541284","title":"Method of manufacturing string floating gates with air gaps in between","assignee":null,"inventors":[],"filing_date":"2011-11-22T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes forming a plurality of strings spaced a first distance from each other, each string including first preliminary gate structures spaced a second distance, smaller than the first distance, between second preliminary gate structures, forming a first insulation layer to cover the first and second preliminary gate structures, forming an insulation layer structure to fill a space between the strings, forming a sacrificial layer pattern to partially fill spaces between first and second preliminary gate structures, removing a portion of the first insulation layer not covered by the sacrificial layer pattern to form a first insulation layer pattern, reacting portions of the first and second preliminary gate structures not covered by the first insulation layer pattern with a conductive layer to form gate structures, and forming a capping layer on the gate structures to form air gaps between the gate structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing string floating gates with air gaps in between","description":"A method of manufacturing a semiconductor device includes forming a plurality of strings spaced a first distance from each other, each string including first preliminary gate structures spaced a secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541284","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541284","citation_suggestion":"Patentable. \"Method of manufacturing string floating gates with air gaps in between\" (US-8541284). https://patentable.app/patents/US-8541284","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541284","json":"https://patentable.app/api/llm-context/US-8541284","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:24:26.695Z"}