{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541296","patent":{"patent_number":"US-8541296","title":"Method of manufacturing dummy gates in gate last process","assignee":null,"inventors":[],"filing_date":"2011-11-30T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"The present invention provides a method of manufacturing a dummy gate in a gate last process, which comprises the steps of forming a dummy gate material layer and a hard mask material layer sequentially on a substrate; etching the hard mask material layer to form a top-wide-bottom-narrow hard mask pattern; dry etching the dummy gate material layer using the hard mask pattern as a mask to form a top-wide-bottom-narrow dummy gate. According to the dummy gate manufacturing method of the present invention, instead of vertical dummy gates used conventionally, top-wide-bottom-narrow trapezoidal dummy gates are formed, and after removing the dummy gates, trapezoidal trenches can be formed. It facilitates the subsequent filling of the high-k or metal gate material and enlarges the window for the filling process; as a result, the device reliability will be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing dummy gates in gate last process","description":"The present invention provides a method of manufacturing a dummy gate in a gate last process, which comprises the steps of forming a dummy gate material layer and a hard mask material layer sequential","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541296","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541296","citation_suggestion":"Patentable. \"Method of manufacturing dummy gates in gate last process\" (US-8541296). https://patentable.app/patents/US-8541296","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541296","json":"https://patentable.app/api/llm-context/US-8541296","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:33.372Z"}