{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541297","patent":{"patent_number":"US-8541297","title":"Manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-13T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of first and second gate electrodes, n+-type semiconductor regions, and p+-type semiconductor regions through a salicide process of a partial reaction type without the use of a salicide process of a whole reaction type. In a heat treatment for forming the metal silicide layer, by heat-treating a semiconductor wafer not with an annealing apparatus using lamps or lasers but with a thermal conductive annealing apparatus using carbon heaters, a thin metal silicide layer is formed with a small thermal budget and a high degree of accuracy and microcrystals of NiSi are formed in the metal silicide layer through a first heat treatment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device","description":"The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541297","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541297","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device\" (US-8541297). https://patentable.app/patents/US-8541297","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541297","json":"https://patentable.app/api/llm-context/US-8541297","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:14.863Z"}