{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541298","patent":{"patent_number":"US-8541298","title":"Method for fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-07-18T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":15,"abstract":"A method for fabricating a semiconductor device having a GaN-based semiconductor layer on a first surface of a substrate made of SiC, a pad being provided on the GaN-based layer, includes: forming a first via hole in the substrate by etching, with fluorine based gas, from a second surface of the substrate opposite to the first surface, the etching being carried out with the GaN-based layer being used as an etch stopper; and forming a second via hole in the GaN-based semiconductor layer, with chlorine based gas, from a bottom surface of the first via hole, the etching being carried out with the pad being used as an etching stopper, the chlorine based gas being an etchant different from the fluorine based gas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device","description":"A method for fabricating a semiconductor device having a GaN-based semiconductor layer on a first surface of a substrate made of SiC, a pad being provided on the GaN-based layer, includes: forming a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541298","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541298","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device\" (US-8541298). https://patentable.app/patents/US-8541298","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541298","json":"https://patentable.app/api/llm-context/US-8541298","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:40:24.244Z"}