{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541308","patent":{"patent_number":"US-8541308","title":"Polishing method and method for forming a gate","assignee":null,"inventors":[],"filing_date":"2011-09-23T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A polishing method and a method for forming a gate are provided. The method includes forming a dummy gate on a semiconductor substrate including a sacrificial oxide layer and a polysilicon layer which covers the sacrificial oxide layer, forming spacers around the dummy gate, and successively forming a silicon nitride layer and a dielectric layer covering the silicon nitride layer. The method further includes polishing the dielectric layer until the silicon nitride layer is exposed, polishing the silicon nitride layer on a fixed abrasive pad until the polysilicon layer is exposed by using a polishing slurry with a PH value ranging from 10.5 to 11 and comprising an anionic surfactant or a zwitterionic surfactant. Additionally, the method includes forming an opening after removing the dummy gate, and forming a gate in the opening. The method eliminates potential erosion and dishing caused in the polishing of the silicon nitride layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Polishing method and method for forming a gate","description":"A polishing method and a method for forming a gate are provided. The method includes forming a dummy gate on a semiconductor substrate including a sacrificial oxide layer and a polysilicon layer which","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541308","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541308","citation_suggestion":"Patentable. \"Polishing method and method for forming a gate\" (US-8541308). https://patentable.app/patents/US-8541308","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541308","json":"https://patentable.app/api/llm-context/US-8541308","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:21:29.478Z"}