{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541316","patent":{"patent_number":"US-8541316","title":"Method of manufacturing semiconductor device including sequentially forming first and second mask material layers and forming a dotted photoresist pattern on the second mask material layer","assignee":null,"inventors":[],"filing_date":"2011-05-20T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"In a method of forming a dense contact-hole pattern in a semiconductor device, the method uses a self-align double patterning technique including forming a square or triangular lattice dot pattern on double layers of mask materials, forming first holes in the upper mask material and second holes wider than the first holes in the lower mask material by double patterning, additionally forming an insulating layer to a thickness such that the first holes are closed such that voids are left in the second holes, and transferring the shape of the voids to a base layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device including sequentially forming first and second mask material layers and forming a dotted photoresist pattern on the second mask material layer","description":"In a method of forming a dense contact-hole pattern in a semiconductor device, the method uses a self-align double patterning technique including forming a square or triangular lattice dot pattern on ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541316","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541316","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device including sequentially forming first and second mask material layers and forming a dotted photoresist pattern on the second mask material layer\" (US-8541316). https://patentable.app/patents/US-8541316","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541316","json":"https://patentable.app/api/llm-context/US-8541316","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:17:06.601Z"}