{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541772","patent":{"patent_number":"US-8541772","title":"Nitride semiconductor stacked structure and method for manufacturing same and nitride semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-09-01T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"According to one embodiment, a nitride semiconductor stacked structure having a first surface includes a substrate, a first buffer layer, a first crystal layer, a second buffer layer and a second crystal layer. A step portion is provided in the substrate and includes an upper surface, a lower surface, and a side surface between the upper surface and the lower surface. The first buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and covers the lower surface and the side surface. The first crystal layer is provided on the first buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has an upper surface provided above the upper surface of the substrate. The second buffer layer includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦1) and continuously covers the upper surface of the first crystal layer and the upper surface of the substrate. The second crystal layer covers the second buffer layer, includes InsAltGa1-s-tN (0≦s≦0.05, 0≦t≦0.05), and has the first surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor stacked structure and method for manufacturing same and nitride semiconductor device","description":"According to one embodiment, a nitride semiconductor stacked structure having a first surface includes a substrate, a first buffer layer, a first crystal layer, a second buffer layer and a second crys","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541772","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541772","citation_suggestion":"Patentable. \"Nitride semiconductor stacked structure and method for manufacturing same and nitride semiconductor device\" (US-8541772). https://patentable.app/patents/US-8541772","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541772","json":"https://patentable.app/api/llm-context/US-8541772","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:57:32.401Z"}