{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541780","patent":{"patent_number":"US-8541780","title":"Semiconductor device having oxide semiconductor layer","assignee":null,"inventors":[],"filing_date":"2010-08-31T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having oxide semiconductor layer","description":"It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541780","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541780","citation_suggestion":"Patentable. \"Semiconductor device having oxide semiconductor layer\" (US-8541780). https://patentable.app/patents/US-8541780","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541780","json":"https://patentable.app/api/llm-context/US-8541780","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:59:33.344Z"}