{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541816","patent":{"patent_number":"US-8541816","title":"III nitride electronic device and III nitride semiconductor epitaxial substrate","assignee":null,"inventors":[],"filing_date":"2008-10-28T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"In a group III nitride hetero junction transistor 11a, a second AlY1InY2Ga1-Y1-Y2N layer 15 forms a hetero junction 21 with a first AlX1InX2Ga1-X1-X2N layer 13a. A first electrode 17 forms a Schottky junction with the first AlX1InX2Ga1-X1-X2N layer 13a. The first AlX1InX2Ga1-X1-X2N layer 13a and the second AlY1InY2Ga1-Y1-Y2N layer 15 are provided over a substrate 23. The electrodes 17a, 18a, and 19a include a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration NC13 in the first AlX1InX2Ga1-X1-X2N layer 13a is less than 1×1017 cm−3. The dislocation density D in the second AlY1InY2Ga1-Y1-Y2N layer 15 is 1×108 cm−2. The hetero junction 21 generates a two-dimensional electron gas layer 25. These provide a low-loss gallium nitride based electronic device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III nitride electronic device and III nitride semiconductor epitaxial substrate","description":"In a group III nitride hetero junction transistor 11a, a second AlY1InY2Ga1-Y1-Y2N layer 15 forms a hetero junction 21 with a first AlX1InX2Ga1-X1-X2N layer 13a. A first electrode 17 forms a Schottky ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541816","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541816","citation_suggestion":"Patentable. \"III nitride electronic device and III nitride semiconductor epitaxial substrate\" (US-8541816). https://patentable.app/patents/US-8541816","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541816","json":"https://patentable.app/api/llm-context/US-8541816","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:15:09.138Z"}