{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541820","patent":{"patent_number":"US-8541820","title":"Semiconductor device including through-electrode","assignee":null,"inventors":[],"filing_date":"2010-06-24T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including through-electrode","description":"According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is fo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541820","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541820","citation_suggestion":"Patentable. \"Semiconductor device including through-electrode\" (US-8541820). https://patentable.app/patents/US-8541820","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541820","json":"https://patentable.app/api/llm-context/US-8541820","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:30.601Z"}