{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541829","patent":{"patent_number":"US-8541829","title":"Nonvolatile semiconductor memory and fabrication method for the same","assignee":null,"inventors":[],"filing_date":"2011-09-19T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A nonvolatile semiconductor memory includes a memory cell transistor including a first floating gate electrode layer formed on a first tunneling insulating film, a first inter-gate insulating film, first and second control gate electrode layers, and a first metallic silicide film; a high voltage transistor including a high voltage gate electrode layer formed on a high voltage gate insulating film, a second inter-gate insulating film having an aperture, third and fourth control gate electrode layers, and a second metallic silicide film; a low voltage transistor including a second floating gate electrode layer formed on a second tunneling insulating film, a third inter-gate insulating film having an aperture, fifth and sixth control gate electrode layers, and a third metallic silicide film; and a liner insulating film directly disposed on source and drain regions of each of the memory cell transistor, the low voltage transistor, and the high voltage transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile semiconductor memory and fabrication method for the same","description":"A nonvolatile semiconductor memory includes a memory cell transistor including a first floating gate electrode layer formed on a first tunneling insulating film, a first inter-gate insulating film, fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541829","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541829","citation_suggestion":"Patentable. \"Nonvolatile semiconductor memory and fabrication method for the same\" (US-8541829). https://patentable.app/patents/US-8541829","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541829","json":"https://patentable.app/api/llm-context/US-8541829","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:18.226Z"}