{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541842","patent":{"patent_number":"US-8541842","title":"High-k transistors with low threshold voltage","assignee":null,"inventors":[],"filing_date":"2012-04-09T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor structure includes a high-k dielectric layer over a semiconductor substrate; and a gate layer over the high-k dielectric layer, wherein the gate layer has a negative electrical bias during anneal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-k transistors with low threshold voltage","description":"A semiconductor structure includes a high-k dielectric layer over a semiconductor substrate; and a gate layer over the high-k dielectric layer, wherein the gate layer has a negative electrical bias du","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541842","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541842","citation_suggestion":"Patentable. \"High-k transistors with low threshold voltage\" (US-8541842). https://patentable.app/patents/US-8541842","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541842","json":"https://patentable.app/api/llm-context/US-8541842","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:00:05.476Z"}