{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541862","patent":{"patent_number":"US-8541862","title":"Semiconductor device with self-biased isolation","assignee":null,"inventors":[],"filing_date":"2011-11-30T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A device includes a semiconductor substrate including a surface, a drain region in the semiconductor substrate having a first conductivity type, a well region in the semiconductor substrate on which the drain region is disposed, the well region having the first conductivity type, a buried isolation layer in the semiconductor substrate extending across the well region, the buried isolation layer having the first conductivity type, a reduced surface field (RESURF) region disposed between the well region and the buried isolation layer, the RESURF region having a second conductivity type, and a plug region in the semiconductor substrate extending from the surface of the substrate to the RESURF region, the plug region having the second conductivity type."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with self-biased isolation","description":"A device includes a semiconductor substrate including a surface, a drain region in the semiconductor substrate having a first conductivity type, a well region in the semiconductor substrate on which t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541862","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541862","citation_suggestion":"Patentable. \"Semiconductor device with self-biased isolation\" (US-8541862). https://patentable.app/patents/US-8541862","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541862","json":"https://patentable.app/api/llm-context/US-8541862","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:03:24.265Z"}