{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8541865","patent":{"patent_number":"US-8541865","title":"Semiconductor device with improved ESD protection","assignee":null,"inventors":[],"filing_date":"2008-10-22T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes (164,166,168,170) with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands (120,122,124,126) in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through-substrate isolations extending from the first to the second substrate side and comprising a filling (128) that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with improved ESD protection","description":"The present invention relates to a semiconductor device, comprising a semiconductor substrate (102) with a thickness of less than 100 micrometer and with a first substrate side and an opposite second ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8541865","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8541865","citation_suggestion":"Patentable. \"Semiconductor device with improved ESD protection\" (US-8541865). https://patentable.app/patents/US-8541865","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8541865","json":"https://patentable.app/api/llm-context/US-8541865","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:40:15.831Z"}