{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8542527","patent":{"patent_number":"US-8542527","title":"Magnetic memory cell","assignee":null,"inventors":[],"filing_date":"2008-03-06T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":13,"abstract":"The present invention relates to a magnetic memory cell, which controls the magnetization direction of the free magnetic layer of a Magnetic Tunnel Junction (MTJ) device using a spin torque transfer, and enables the implementation of a magnetic logic circuit, in which memory and logic circuit functions are integrated. The magnetic memory cell includes an MTJ device (10) including a top electrode (11) and a bottom electrode (13), which are provided to allow current to flow therethrough, and a fixed layer (15) and a free layer (17), which are magnetic layers respectively deposited on a top and a bottom of an insulating layer (19), required to insulate the top and bottom electrodes from each other. A current control circuit (50) controls a flow of current flowing between the top and bottom electrodes, and changes a magnetization direction of the free layer according to an input logic level."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic memory cell","description":"The present invention relates to a magnetic memory cell, which controls the magnetization direction of the free magnetic layer of a Magnetic Tunnel Junction (MTJ) device using a spin torque transfer, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8542527","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8542527","citation_suggestion":"Patentable. \"Magnetic memory cell\" (US-8542527). https://patentable.app/patents/US-8542527","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8542527","json":"https://patentable.app/api/llm-context/US-8542527","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:25:32.694Z"}