{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8542535","patent":{"patent_number":"US-8542535","title":"Controlling select gate voltage during erase to improve endurance in non volatile memory","assignee":null,"inventors":[],"filing_date":"2011-07-13T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":16,"abstract":"A technique for erasing a non-volatile memory applies a p-well voltage to a substrate and drives select gate voltages to accurately control the select gate voltage to improve write-erase endurance. Source and drain side select gates of a NAND string are driven at levels to optimize endurance. In one approach, the select gates are driven at specific levels throughout an erase operation, in concert with the p-well voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Controlling select gate voltage during erase to improve endurance in non volatile memory","description":"A technique for erasing a non-volatile memory applies a p-well voltage to a substrate and drives select gate voltages to accurately control the select gate voltage to improve write-erase endurance. So","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8542535","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8542535","citation_suggestion":"Patentable. \"Controlling select gate voltage during erase to improve endurance in non volatile memory\" (US-8542535). https://patentable.app/patents/US-8542535","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8542535","json":"https://patentable.app/api/llm-context/US-8542535","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:25:10.158Z"}