{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8542540","patent":{"patent_number":"US-8542540","title":"Nonvolatile memory and methods for manufacturing the same with molecule-engineered tunneling barriers","assignee":null,"inventors":[],"filing_date":"2010-03-26T00:00:00.000Z","publication_date":"2013-09-24T00:00:00.000Z","cpc_codes":["B82Y","G11C"],"num_claims":17,"abstract":"Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory and methods for manufacturing the same with molecule-engineered tunneling barriers","description":"Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8542540","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8542540","citation_suggestion":"Patentable. \"Nonvolatile memory and methods for manufacturing the same with molecule-engineered tunneling barriers\" (US-8542540). https://patentable.app/patents/US-8542540","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8542540","json":"https://patentable.app/api/llm-context/US-8542540","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:17:09.495Z"}