{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589638","patent":{"patent_number":"US-9589638","title":"Semiconductor device and method of driving semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-05-11T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A first potential and a second potential lower than the first potential are applied to a first end of a memory gate electrode part of the nonvolatile memory and to a second end of the memory gate electrode part, respectively, so that a current is caused to flow in a direction in which the memory gate electrode part extends, then, a hole is injected from the memory gate electrode part into a charge accumulating part below it, therefore, an electron accumulated in the charge accumulating part is eliminated. By causing the current to flow through the memory gate electrode part of a memory cell region as described above, Joule heat can be generated to heat the memory cell. Consequently, in the erasing by a FN tunneling method in which the erasing characteristics degrade at a low temperature, the erasing speed can be improved by heating the memory gate electrode part."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of driving semiconductor device","description":"A first potential and a second potential lower than the first potential are applied to a first end of a memory gate electrode part of the nonvolatile memory and to a second end of the memory gate elec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589638","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589638","citation_suggestion":"Patentable. \"Semiconductor device and method of driving semiconductor device\" (US-9589638). https://patentable.app/patents/US-9589638","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589638","json":"https://patentable.app/api/llm-context/US-9589638","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:27.608Z"}