{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589796","patent":{"patent_number":"US-9589796","title":"Method of defining poly-silicon growth direction","assignee":null,"inventors":[],"filing_date":"2014-01-21T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"The present invention relates to a method of defining poly-silicon growth direction. The method of defining poly-silicon growth direction comprises Step 1, forming a buffer layer on a substrate; Step 2, forming an amorphous silicon thin film on the buffer layer; Step 3, forming regular amorphous silicon convex portions on the amorphous silicon thin film; and Step 4, transferring the amorphous silicon thin film into poly-silicon with an excimer laser anneal process. The growth direction of the poly-silicon as being formed can be controlled according to the present method of defining poly-silicon growth direction. Accordingly, the grain size of the poly-silicon can be raised."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of defining poly-silicon growth direction","description":"The present invention relates to a method of defining poly-silicon growth direction. The method of defining poly-silicon growth direction comprises Step 1, forming a buffer layer on a substrate; Step ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589796","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589796","citation_suggestion":"Patentable. \"Method of defining poly-silicon growth direction\" (US-9589796). https://patentable.app/patents/US-9589796","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589796","json":"https://patentable.app/api/llm-context/US-9589796","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:05:13.296Z"}