{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589806","patent":{"patent_number":"US-9589806","title":"Integrated circuit with replacement gate stacks and method of forming same","assignee":null,"inventors":[],"filing_date":"2015-10-19T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"An IC structure including: a first replacement gate stack for the pFET, the first replacement gate stack including: an interfacial layer in a first opening in the dielectric layer; a high-k layer over the interfacial layer in the first opening; a pFET work function metal layer over the high-k layer in the first opening; and a first gate electrode layer over the pFET work function metal layer and substantially filling the first opening; and a second replacement gate stack for the nFET, the second gate stack laterally adjacent to the first gate stack and including: the interfacial layer in a second opening in the dielectric layer; the high-k layer over the interfacial layer in the second opening; a nFET work function metal layer over the high-k layer in the second opening; and a second gate electrode layer over the nFET work function metal layer and substantially filling the second opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit with replacement gate stacks and method of forming same","description":"An IC structure including: a first replacement gate stack for the pFET, the first replacement gate stack including: an interfacial layer in a first opening in the dielectric layer; a high-k layer over","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589806","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589806","citation_suggestion":"Patentable. \"Integrated circuit with replacement gate stacks and method of forming same\" (US-9589806). https://patentable.app/patents/US-9589806","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589806","json":"https://patentable.app/api/llm-context/US-9589806","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:41:10.590Z"}