{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589827","patent":{"patent_number":"US-9589827","title":"Shallow trench isolation regions made from crystalline oxides","assignee":null,"inventors":[],"filing_date":"2014-06-16T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor structures on either side of the crystalline structure. Crystalline oxides may include rare earth oxides, aluminum oxides or Perovskites."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Shallow trench isolation regions made from crystalline oxides","description":"A method of manufacturing a semiconductor device that involves etching a trench in a semiconductor substrate, epitaxially growing a crystalline structure in the trench and forming semiconductor struct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589827","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589827","citation_suggestion":"Patentable. \"Shallow trench isolation regions made from crystalline oxides\" (US-9589827). https://patentable.app/patents/US-9589827","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589827","json":"https://patentable.app/api/llm-context/US-9589827","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:37:57.436Z"}