{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589849","patent":{"patent_number":"US-9589849","title":"Methods of modulating strain in PFET and NFET FinFET semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-02-27T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"One illustrative method disclosed herein includes, among other things, forming a plurality of initial fins that have the same initial axial length and the same initial strain above a substrate, performing at least one etching process so as to cut a first fin to a first axial length and to cut a second fin to a second axial length that is less than the first axial length, wherein the cut first fin retains a first amount of the initial strain and the cut second fin retains about zero of the initial strain or a second amount of the initial strain that is less than the first amount, and forming gate structures around the first and second cut fins to form FinFET devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of modulating strain in PFET and NFET FinFET semiconductor devices","description":"One illustrative method disclosed herein includes, among other things, forming a plurality of initial fins that have the same initial axial length and the same initial strain above a substrate, perfor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589849","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589849","citation_suggestion":"Patentable. \"Methods of modulating strain in PFET and NFET FinFET semiconductor devices\" (US-9589849). https://patentable.app/patents/US-9589849","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589849","json":"https://patentable.app/api/llm-context/US-9589849","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:40:32.080Z"}