{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589899","patent":{"patent_number":"US-9589899","title":"Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures","assignee":null,"inventors":[],"filing_date":"2015-07-17T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"In a semiconductor device, a first gate structure having a first end portion is formed on a substrate. A second gate structure is formed on the substrate, and has a second end portion opposite to the first end portion of the first gate structure in a diagonal direction. A cross-coupling pattern is formed between the first and second gate structure, and electrically connects the first and second gate structures to each other. A first contact plug directly contacts an upper portion of the first end portion of the first gate structure and a first upper sidewall of the cross-coupling pattern. A second contact plug directly contacts an upper portion of the second end portion of the second gate structure and a second upper sidewall of the cross-coupling pattern. In the semiconductor device, a parasitic capacitance due to the cross-coupling structure may decrease."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures","description":"In a semiconductor device, a first gate structure having a first end portion is formed on a substrate. A second gate structure is formed on the substrate, and has a second end portion opposite to the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589899","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589899","citation_suggestion":"Patentable. \"Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures\" (US-9589899). https://patentable.app/patents/US-9589899","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589899","json":"https://patentable.app/api/llm-context/US-9589899","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:29:05.843Z"}