{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589971","patent":{"patent_number":"US-9589971","title":"Anti-fuse one-time programmable memory cell and anti-fuse one-time programmable memory array","assignee":null,"inventors":[],"filing_date":"2016-09-12T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","G11C","G11C","G11C","G11C","G11C","H01L"],"num_claims":16,"abstract":"An anti-fuse memory cell is provided. The anti-fuse memory cell includes a programmable transistor and a selection transistor. The programmable transistor includes a gate structure, a first doped region and a lightly doped region. The first doped region is divided into a first portion doped region, a second portion doped region and a third portion doped region. The first and second portion doped regions are respectively a source and a drain of the programmable transistor, and the third portion doped region is disposed between the first and second portion doped regions. The lightly doped region is distributed around a channel region of the programmable transistor, and adjacent to the first, second and third portion doped regions. The selection transistor includes a gate structure and a second doped region, and connected in series to the programmable transistor through the first portion doped region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Anti-fuse one-time programmable memory cell and anti-fuse one-time programmable memory array","description":"An anti-fuse memory cell is provided. The anti-fuse memory cell includes a programmable transistor and a selection transistor. The programmable transistor includes a gate structure, a first doped regi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589971","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589971","citation_suggestion":"Patentable. \"Anti-fuse one-time programmable memory cell and anti-fuse one-time programmable memory array\" (US-9589971). https://patentable.app/patents/US-9589971","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589971","json":"https://patentable.app/api/llm-context/US-9589971","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:00:08.067Z"}