{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589976","patent":{"patent_number":"US-9589976","title":"Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits","assignee":null,"inventors":[],"filing_date":"2015-04-16T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The present disclosure relates to an integrated circuit (IC), including, a flash memory device region, including a pair of split-gate flash memory cells arranged over a semiconductor substrate. The pair of split gate flash memory cells respectively have a control gate (CG) including a polysilicon gate and an overlying silicide layer. A periphery circuit including, one or more high-k metal gate (HKMG) transistors are arranged over the semiconductor substrate at a position laterally offset from the flash memory device region. The one or more HKMG transistors have a metal gate electrode with an upper surface that is lower than an upper surface of the silicide layer. A method of manufacturing the IC is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits","description":"The present disclosure relates to an integrated circuit (IC), including, a flash memory device region, including a pair of split-gate flash memory cells arranged over a semiconductor substrate. The pa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589976","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589976","citation_suggestion":"Patentable. \"Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits\" (US-9589976). https://patentable.app/patents/US-9589976","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589976","json":"https://patentable.app/api/llm-context/US-9589976","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:02:50.085Z"}