{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589983","patent":{"patent_number":"US-9589983","title":"Efficient buried oxide layer interconnect scheme","assignee":null,"inventors":[],"filing_date":"2016-06-03T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit has a buried interconnect in the buried oxide layer connecting a body of a MOS transistor to a through-substrate via (TSV). The buried interconnect extends laterally past the TSV. The integrated circuit is formed by starting with a substrate, forming the buried oxide layer with the buried interconnect at a top surface of the substrate, and forming a semiconductor device layer over the buried oxide layer. The MOS transistor is formed in the semiconductor device layer so that the body makes an electrical connection to the buried interconnect. Subsequently, the TSV is formed through a bottom surface of the substrate so as to make an electrical connection to the buried interconnect in the buried oxide layer. A body of a transistor is electrically coupled to the TSV through the buried interconnect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Efficient buried oxide layer interconnect scheme","description":"An integrated circuit has a buried interconnect in the buried oxide layer connecting a body of a MOS transistor to a through-substrate via (TSV). The buried interconnect extends laterally past the TSV","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589983","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589983","citation_suggestion":"Patentable. \"Efficient buried oxide layer interconnect scheme\" (US-9589983). https://patentable.app/patents/US-9589983","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589983","json":"https://patentable.app/api/llm-context/US-9589983","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:58:27.217Z"}