{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9589985","patent":{"patent_number":"US-9589985","title":"LTPS TFT substrate structure and method of forming the same","assignee":null,"inventors":[],"filing_date":"2015-02-09T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A method of forming an LTPS TFT substrate includes: Step 1: providing a substrate (1) and depositing a buffer layer (2); Step 2: depositing an a-Si layer (3); Step 3: depositing and patterning a silicon oxide layer (4); Step 4: taking the silicon oxide layer (4) as a photomask and annealing the a-Si layer (3) with excimer laser, so that the a-Si layer crystalizes and turns into a poly-Si layer; Step 5: forming a first poly-Si region (31) and a second poly-Si region (32); Step 6: defining a heavily N-doped area and a lightly N-doped area on the first and second poly-Si regions (31) and (32), and forming an LDD area; Step 7: depositing and patterning a gate insulating layer (5); Step 8: forming a first gate (61) and a second gate (62); Step 9: forming via holes (70); and Step 10: forming a first source/drain (81) and a second source/drain (82)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"LTPS TFT substrate structure and method of forming the same","description":"A method of forming an LTPS TFT substrate includes: Step 1: providing a substrate (1) and depositing a buffer layer (2); Step 2: depositing an a-Si layer (3); Step 3: depositing and patterning a silic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9589985","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9589985","citation_suggestion":"Patentable. \"LTPS TFT substrate structure and method of forming the same\" (US-9589985). https://patentable.app/patents/US-9589985","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9589985","json":"https://patentable.app/api/llm-context/US-9589985","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:03:02.716Z"}