{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590010","patent":{"patent_number":"US-9590010","title":"Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer","assignee":null,"inventors":[],"filing_date":"2016-03-24T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":29,"abstract":"Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure. In this manner, a second AP ferromagnetic (AP2) layer disposed on the AFC layer can be provided in a reduced thickness BCC crystalline or amorphous structure to provide a high TMR with a reduced pinned layer thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer","description":"Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a bod","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590010","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590010","citation_suggestion":"Patentable. \"Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer\" (US-9590010). https://patentable.app/patents/US-9590010","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590010","json":"https://patentable.app/api/llm-context/US-9590010","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:56:13.420Z"}