{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590031","patent":{"patent_number":"US-9590031","title":"Fin-type field effect transistor and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2015-02-13T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A fin-type field effect transistor includes a semiconductor body formed on a substrate, the semiconductor body having a top surface and a pair of laterally opposite sidewalls, and a gate electrode formed above the sidewalls and the top surface of the semiconductor body. The semiconductor body further includes a source region formed on an end portion of the semiconductor body, a drain region formed on another end portion of the semiconductor body, and a channel region formed between the source region and the drain region and surrounded by the gate electrode, wherein a doping concentration of the channel region decreases with increasing distance from the top surface and the sidewalls."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin-type field effect transistor and manufacturing method thereof","description":"A fin-type field effect transistor includes a semiconductor body formed on a substrate, the semiconductor body having a top surface and a pair of laterally opposite sidewalls, and a gate electrode for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590031","citation_suggestion":"Patentable. \"Fin-type field effect transistor and manufacturing method thereof\" (US-9590031). https://patentable.app/patents/US-9590031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590031","json":"https://patentable.app/api/llm-context/US-9590031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:40.891Z"}