{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590047","patent":{"patent_number":"US-9590047","title":"SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer","assignee":null,"inventors":[],"filing_date":"2012-04-04T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":23,"abstract":"A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a collector region (120). The collector region is arranged on a substrate (110) having an off-axis orientation of about 8 degrees or lower. A defect termination layer (DTL, 130) for terminating dislocations originating from the substrate is arranged between the substrate and the collector region. The collector region includes a zone (125) in which the life time of the minority charge carriers is shorter than in the base region. The present invention is advantageous in terms of improved stability of the SiC BJTs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer","description":"A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a collector","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590047","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590047","citation_suggestion":"Patentable. \"SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer\" (US-9590047). https://patentable.app/patents/US-9590047","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590047","json":"https://patentable.app/api/llm-context/US-9590047","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:36:01.189Z"}