{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590063","patent":{"patent_number":"US-9590063","title":"Method and structure for a large-grain high-K dielectric","assignee":null,"inventors":[],"filing_date":"2014-12-19T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A method of forming a semiconductor device (100) includes depositing a metal oxide (104) over the substrate (102). The depositing includes combining a first metal and oxygen to form the metal oxide having grains and further adding a catalyst during the combining. The catalyst causes the grains to be bigger than would occur in the absence of the catalyst. A conductive layer (202) is formed over the metal oxide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure for a large-grain high-K dielectric","description":"A method of forming a semiconductor device (100) includes depositing a metal oxide (104) over the substrate (102). The depositing includes combining a first metal and oxygen to form the metal oxide ha","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590063","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590063","citation_suggestion":"Patentable. \"Method and structure for a large-grain high-K dielectric\" (US-9590063). https://patentable.app/patents/US-9590063","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590063","json":"https://patentable.app/api/llm-context/US-9590063","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:35.977Z"}