{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590069","patent":{"patent_number":"US-9590069","title":"Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation","assignee":null,"inventors":[],"filing_date":"2015-06-26T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an intervening mandrel to independently define a gate length, gate-source length, and gate-drain length with a single masking operation. In embodiments, III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and/or enhancement mode operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation","description":"Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high brea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590069","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590069","citation_suggestion":"Patentable. \"Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation\" (US-9590069). https://patentable.app/patents/US-9590069","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590069","json":"https://patentable.app/api/llm-context/US-9590069","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:27:44.738Z"}