{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590071","patent":{"patent_number":"US-9590071","title":"Manufacturing method of semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-01-14T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"The characteristics of a semiconductor device using a nitride semiconductor are improved.A trench which penetrates an insulating film and a barrier layer and reaches inside of a channel layer is formed by etching the channel layer, the barrier layer, and the insulating film which are formed over a substrate. Then, an epitaxial regrowth layer is formed over a bottom surface and a side surface of the trench by using an epitaxial growth method. It is possible to reduce roughness (unevenness) of a crystal surface due to etching and the like of the bottom surface and the side surface of the trench by forming the epitaxial regrowth layer in this way. A channel is formed in an interface between the epitaxial regrowth layer and a gate insulating film, so that mobility of carriers improves and on-resistance of an element decreases."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device and semiconductor device","description":"The characteristics of a semiconductor device using a nitride semiconductor are improved.A trench which penetrates an insulating film and a barrier layer and reaches inside of a channel layer is forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590071","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590071","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device and semiconductor device\" (US-9590071). https://patentable.app/patents/US-9590071","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590071","json":"https://patentable.app/api/llm-context/US-9590071","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:02:35.470Z"}