{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590073","patent":{"patent_number":"US-9590073","title":"Methods of fabricating semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-07-31T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Semiconductor devices and methods of fabricating semiconductor devices are provided. The methods may include forming an interlayer insulation layer on a substrate. The interlayer insulation layer may surround a dummy silicon gate and may expose a top surface of the dummy silicon gate. The methods may also include recessing a portion of the interlayer insulation layer such that a portion of the dummy silicon gate protrudes above a top surface of the recessed interlayer insulation layer and forming an etch stop layer on the recessed interlayer insulation layer. A top surface of the etch stop layer may be coplanarly positioned with the top surface of the dummy silicon gate. The methods may further include forming a trench exposing the substrate by removing the dummy silicon gate using the etch stop layer as a mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of fabricating semiconductor devices","description":"Semiconductor devices and methods of fabricating semiconductor devices are provided. The methods may include forming an interlayer insulation layer on a substrate. The interlayer insulation layer may ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590073","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590073","citation_suggestion":"Patentable. \"Methods of fabricating semiconductor devices\" (US-9590073). https://patentable.app/patents/US-9590073","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590073","json":"https://patentable.app/api/llm-context/US-9590073","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:45:58.183Z"}