{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590092","patent":{"patent_number":"US-9590092","title":"Super junction field effect transistor with internal floating ring","assignee":null,"inventors":[],"filing_date":"2014-11-13T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A Super Junction Field Effect Transistor (FET) device includes a charge compensation region disposed on a substrate of semiconductor material. The charge compensation region includes a set of strip-shaped P− type columns, a floating ring-shaped P− type column that surrounds the set of strip-shaped P− type columns, and a set of ring-shaped P− type columns that surrounds the floating ring-shaped P− type column. A source metal is disposed above portions of the charge compensation region. The source metal contacts each of the strip-shaped P− type columns and each of the ring-shaped P− type columns. An oxide is disposed between the floating P− type column and the source metal such that the floating P− type column is electrically isolated from the source metal. The device exhibits a breakdown voltage that is 0.2% greater than if the floating P− type column were to contact the source metal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Super junction field effect transistor with internal floating ring","description":"A Super Junction Field Effect Transistor (FET) device includes a charge compensation region disposed on a substrate of semiconductor material. The charge compensation region includes a set of strip-sh","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590092","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590092","citation_suggestion":"Patentable. \"Super junction field effect transistor with internal floating ring\" (US-9590092). https://patentable.app/patents/US-9590092","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590092","json":"https://patentable.app/api/llm-context/US-9590092","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:44:49.689Z"}