{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590094","patent":{"patent_number":"US-9590094","title":"Semiconductor device with power transistor cells and lateral transistors and method of manufacturing","assignee":null,"inventors":[],"filing_date":"2015-06-12T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"By thermal oxidation a field oxide layer is formed that lines first and second trenches that extend from a main surface into a semiconductor layer. After the thermal oxidation, field electrodes and trench gate electrodes of power transistor cells are formed in the first and second trenches. A protection cover including a silicon nitride layer is formed that covers a cell area with the first and second trenches. With the protection cover covering the cell area, planar gate electrodes of lateral transistors are formed in a support area of the semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with power transistor cells and lateral transistors and method of manufacturing","description":"By thermal oxidation a field oxide layer is formed that lines first and second trenches that extend from a main surface into a semiconductor layer. After the thermal oxidation, field electrodes and tr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590094","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590094","citation_suggestion":"Patentable. \"Semiconductor device with power transistor cells and lateral transistors and method of manufacturing\" (US-9590094). https://patentable.app/patents/US-9590094","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590094","json":"https://patentable.app/api/llm-context/US-9590094","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:32:38.150Z"}