{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590098","patent":{"patent_number":"US-9590098","title":"Method for producing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-08-12T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for producing a semiconductor device includes a first step of forming a first insulating film around the fin-shaped semiconductor layer; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate formed of a first polysilicon; a third step of forming a second dummy gate on sidewalls of the first dummy gate and the pillar-shaped semiconductor layer; a fourth step of forming a fifth insulating film left as a sidewall around the second dummy gate, forming a second diffusion layer in an upper portion of the fin-shaped semiconductor layer and a lower portion of the pillar-shaped semiconductor layer, and forming a metal-semiconductor compound on the second diffusion layer; a fifth step of forming a gate electrode and a gate line; and a sixth step of depositing a second gate insulating film around the pillar-shaped semiconductor layer and on the gate electrode and the gate line, removing a portion of the second gate insulating film on the gate line, depositing a second metal, etching back the second metal, removing the second gate insulating film on the pillar-shaped semiconductor layer, depositing a third metal, and etching a portion of the third metal and a portion of the second metal to form a first contact in which the second metal surrounds a sidewall of an upper portion of the pillar-shaped semiconductor layer, a second contact that connects an upper portion of the first contact and an upper portion of the pillar-shaped semiconductor layer, and a third contact made of the second metal and the third metal and formed on the gate line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device and semiconductor device","description":"A method for producing a semiconductor device includes a first step of forming a first insulating film around the fin-shaped semiconductor layer; a second step of forming a pillar-shaped semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590098","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590098","citation_suggestion":"Patentable. \"Method for producing semiconductor device and semiconductor device\" (US-9590098). https://patentable.app/patents/US-9590098","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590098","json":"https://patentable.app/api/llm-context/US-9590098","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:04:53.953Z"}