{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9590102","patent":{"patent_number":"US-9590102","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2015-04-15T00:00:00.000Z","publication_date":"2017-03-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming a fin structure including a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. An isolation insulating layer is formed so that the channel layer of the fin structure protrudes from the isolation insulating layer and a part of or an entirety of the oxide layer is embedded in the isolation insulating layer. A gate structure is formed over the fin structure. A recessed portion is formed by etching a part of the fin structure not covered by the gate structure such that the oxide layer is exposed. A recess is formed in the exposed oxide layer. An epitaxial seed layer in the recess in the oxide layer. An epitaxial layer is formed in and above the recessed portion. The epitaxial layer is in contact with the epitaxial seed layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A method for manufacturing a semiconductor device includes forming a fin structure including a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9590102","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9590102","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9590102). https://patentable.app/patents/US-9590102","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9590102","json":"https://patentable.app/api/llm-context/US-9590102","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:04:42.761Z"}